Paper Title:
Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
451-454
DOI
10.4028/www.scientific.net/MSF.353-356.451
Citation
A. Schöner, N. Miyamoto, T. Kimoto, H. Matsunami, "Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 451-454, 2001
Online since
January 2001
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