Paper Title:
Boron Centers in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
455-458
DOI
10.4028/www.scientific.net/MSF.353-356.455
Citation
B. Aradi, A. Gali, P. Deák, E. Rauls, T. Frauenheim, N. T. Son, "Boron Centers in 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 455-458, 2001
Online since
January 2001
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Price
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