Boron Centers in 4H-SiC
| Periodical | Materials Science Forum (Volumes 353 - 356) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2000 |
| Edited by | G. Pensl, D. Stephani and M. Hundhausen |
| Pages | 455-458 |
| DOI | 10.4028/www.scientific.net/MSF.353-356.455 |
| Citation | B. Aradi et al., 2001, Materials Science Forum, 353-356, 455 |
| Authors | B. Aradi, Adam Gali, Peter Deák, E. Rauls, Thomas Frauenheim, Nguyen Tien Son |
| Keywords | Boron, Intrinsic Defect, Occupancy Level, Theory |
| Price | US$ 28,- |