Paper Title:

Boron Centers in 4H-SiC

Periodical Materials Science Forum (Volumes 353 - 356)
Main Theme Silicon Carbide and Related Materials 2000
Edited by G. Pensl, D. Stephani and M. Hundhausen
Pages 455-458
DOI 10.4028/www.scientific.net/MSF.353-356.455
Citation B. Aradi et al., 2001, Materials Science Forum, 353-356, 455
Authors B. Aradi, Adam Gali, Peter Deák, E. Rauls, Thomas Frauenheim, Nguyen Tien Son
Keywords Boron, Intrinsic Defect, Occupancy Level, Theory
Price US$ 28,-
Article Preview
View full size