Paper Title:
Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
459-462
DOI
10.4028/www.scientific.net/MSF.353-356.459
Citation
O. Klettke, G. Pensl, T. Kimoto, H. Matsunami, "Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient", Materials Science Forum, Vols. 353-356, pp. 459-462, 2001
Online since
January 2001
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