Paper Title:
Electrical Activity of Isolated Oxygen Defects in SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
463-466
DOI
10.4028/www.scientific.net/MSF.353-356.463
Citation
A. Gali, D. Heringer, P. Deák, Z. Hajnal, T. Frauenheim, W. J. Choyke, "Electrical Activity of Isolated Oxygen Defects in SiC", Materials Science Forum, Vols. 353-356, pp. 463-466, 2001
Online since
January 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.