Paper Title:
Beryllium-Related Defect Centers in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
467-470
DOI
10.4028/www.scientific.net/MSF.353-356.467
Citation
M. Krieger, M. Laube, M. Weidner, G. Pensl, "Beryllium-Related Defect Centers in 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 467-470, 2001
Online since
January 2001
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Price
$32.00
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