Paper Title:
Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
479-482
DOI
10.4028/www.scientific.net/MSF.353-356.479
Citation
V.S. Lysenko, I.P. Osiyuk, T.E. Rudenko, I.P. Tyagulski, E. Ö. Sveinbjörnsson, H.Ö. Ólafsson, "Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique", Materials Science Forum, Vols. 353-356, pp. 479-482, 2001
Online since
January 2001
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