Paper Title:
Intrinsic Mobility of Conduction Electrons in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
483-486
DOI
10.4028/www.scientific.net/MSF.353-356.483
Citation
J. Pernot, S. Contreras, E. Neyret, L. Di Cioccio, W. Zawadzki, J.-L. Robert, "Intrinsic Mobility of Conduction Electrons in 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 483-486, 2001
Online since
January 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.