Study of Boron Incorporation During PVT Growth of p-type SiC Crystals |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
49-52 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.49 |
| Citation |
Matthias Bickermann et al., 2001, Materials Science Forum, 353-356, 49 |
| Authors |
Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker |
| Keywords |
Aluminum Doping, Boron Doping, Bulk Growth, Dopant Homogeneity |
| Full Paper |
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