Paper Title:
Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
49-52
DOI
10.4028/www.scientific.net/MSF.353-356.49
Citation
M. Bickermann, D. Hofmann, M. Rasp, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker, "Study of Boron Incorporation During PVT Growth of p-type SiC Crystals", Materials Science Forum, Vols. 353-356, pp. 49-52, 2001
Online since
January 2001
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Price
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