Paper Title:
Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
495-498
DOI
10.4028/www.scientific.net/MSF.353-356.495
Citation
H. Matsuura, Y. Masuda, Y. Chen, S. Nishino, "Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements", Materials Science Forum, Vols. 353-356, pp. 495-498, 2001
Online since
January 2001
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