Paper Title:
Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
509-512
DOI
10.4028/www.scientific.net/MSF.353-356.509
Citation
H. J. von Bardeleben, J.L. Cantin, P.G. Baranov, E.N. Mokhov, "Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold", Materials Science Forum, Vols. 353-356, pp. 509-512, 2001
Online since
January 2001
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