Paper Title:
Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
53-56
DOI
10.4028/www.scientific.net/MSF.353-356.53
Citation
S. A. Reshanov, V.P. Rastegaev, Y. M. Tairov, "Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport", Materials Science Forum, Vols. 353-356, pp. 53-56, 2001
Online since
January 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.