Paper Title:
Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
537-542
DOI
10.4028/www.scientific.net/MSF.353-356.537
Citation
A. Kawasuso, F. Redmann, R. Krause-Rehberg, P. Sperr, T. Frank, M. Weidner, G. Pensl, H. Itoh, "Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study", Materials Science Forum, Vols. 353-356, pp. 537-542, 2001
Online since
January 2001
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