Paper Title:
Recent Progress in SiC Epitaxial Growth and Device Processing Technology
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
543-548
DOI
10.4028/www.scientific.net/MSF.353-356.543
Citation
T. Kimoto, H. Yano, S. Tamura, N. Miyamoto, K. Fujihira, Y. Negoro, H. Matsunami, "Recent Progress in SiC Epitaxial Growth and Device Processing Technology", Materials Science Forum, Vols. 353-356, pp. 543-548, 2001
Online since
January 2001
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Price
$32.00
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