Paper Title:
Doping of Silicon Carbide by Ion Implantation
| Periodical | Materials Science Forum (Volumes 353 - 356) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2000 |
| Edited by | G. Pensl, D. Stephani and M. Hundhausen |
| Pages | 549-554 |
| DOI | 10.4028/www.scientific.net/MSF.353-356.549 |
| Citation | Bengt G. Svensson et al., 2001, Materials Science Forum, 353-356, 549 |
| Authors | Bengt G. Svensson, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Martin S. Janson, Boleslaw Formanek, John Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, Peder Bergman, C. Jagadish, Erwan Morvan |
| Keywords | Defect Recombination, Dopant Activation, Dopant Compensation, Interstitial Clusters, Ostwald Ripening, Transient Enhanced Diffusion TED |
| Price | US$ 28,- |
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