Paper Title:
Doping of Silicon Carbide by Ion Implantation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
549-554
DOI
10.4028/www.scientific.net/MSF.353-356.549
Citation
B. G. Svensson, A. Hallén, M. K. Linnarsson, A. Y. Kuznetsov, M. S. Janson, B. Formanek, J. Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, P. Bergman, C. Jagadish, E. Morvan, "Doping of Silicon Carbide by Ion Implantation", Materials Science Forum, Vols. 353-356, pp. 549-554, 2001
Online since
January 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.