Paper Title:
Techniques for Depth Profiling of Dopants in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
559-562
DOI
10.4028/www.scientific.net/MSF.353-356.559
Citation
J. Österman, A. Hallén, S. Anand, M. K. Linnarsson, H. Andersson, B. Formanek, D. Panknin, W. Skorupa, "Techniques for Depth Profiling of Dopants in 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 559-562, 2001
Online since
January 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.