Paper Title:
Growth of δ-Doped SiC Epitaxial Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
563-566
DOI
10.4028/www.scientific.net/MSF.353-356.563
Citation
S. Karlsson, C. Adås, A. O. Konstantinov, M. K. Linnarsson, "Growth of δ-Doped SiC Epitaxial Layers", Materials Science Forum, Vols. 353-356, pp. 563-566, 2001
Online since
January 2001
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Price
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