Paper Title:
Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
| Periodical | Materials Science Forum (Volumes 353 - 356) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2000 |
| Edited by | G. Pensl, D. Stephani and M. Hundhausen |
| Pages | 567-570 |
| DOI | 10.4028/www.scientific.net/MSF.353-356.567 |
| Citation | S. Ortolland et al., 2001, Materials Science Forum, 353-356, 567 |
| Authors | S. Ortolland, Nicolas G. Wright, C. Mark Johnson, A.P. Knights, Paul G. Coleman, C.P. Burrows, A.J. Pidduck |
| Keywords | Annealing, Atomic Force Microscope (AFM), Bipolar Junction Transistor (BJT), Bipolar Transistor, Implantation, PAS, RBS |
| Price | US$ 28,- |
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