Paper Title:
Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
567-570
DOI
10.4028/www.scientific.net/MSF.353-356.567
Citation
S. Ortolland, N. G. Wright, C. M. Johnson, A.P. Knights, P. G. Coleman, C.P. Burrows, A.J. Pidduck, "Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor", Materials Science Forum, Vols. 353-356, pp. 567-570, 2001
Online since
January 2001
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