Paper Title:
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
571-574
DOI
10.4028/www.scientific.net/MSF.353-356.571
Citation
M. Lazar, L. Ottaviani, M. L. Locatelli, C. Raynaud, D. Planson, E. Morvan, P. Godignon, W. Skorupa, J.-P. Chante, "High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing", Materials Science Forum, Vols. 353-356, pp. 571-574, 2001
Online since
January 2001
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Price
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