Channeling Measurements of Ion Implantation Damage in 4H-SiC |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
595-598 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.595 |
| Citation |
Andrej Yu. Kuznetsov et al., 2001, Materials Science Forum, 353-356, 595 |
| Authors |
Andrej Yu. Kuznetsov, Martin S. Janson, Anders Hallén, Bengt G. Svensson, C. Jagadish, H. Grünleitner, Gerhard Pensl |
| Keywords |
Al, Annealing, Displaced Silicon Atoms, Implantation Induced Defects, Interstitial, Vacancy |
| Full Paper |
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