Paper Title:
Channeling Measurements of Ion Implantation Damage in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
595-598
DOI
10.4028/www.scientific.net/MSF.353-356.595
Citation
A. Y. Kuznetsov, M. S. Janson, A. Hallén, B. G. Svensson, C. Jagadish, H. Grünleitner, G. Pensl, "Channeling Measurements of Ion Implantation Damage in 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 595-598, 2001
Online since
January 2001
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Price
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