Paper Title:
Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
631-634
DOI
10.4028/www.scientific.net/MSF.353-356.631
Citation
K. Fukuda, S. Suzuki, J. Senzaki, W.J. Cho, T. Tanaka, K. Arai, "Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face", Materials Science Forum, Vols. 353-356, pp. 631-634, 2001
Online since
January 2001
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Price
$32.00
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