Paper Title:
Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
635-638
DOI
10.4028/www.scientific.net/MSF.353-356.635
Citation
M. Yoshikawa, T. Ohshima, H. Itoh, K. Takahashi, M. Kitabatake, "Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 635-638, 2001
Online since
January 2001
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Price
$32.00
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