Paper Title:
Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
639-642
DOI
10.4028/www.scientific.net/MSF.353-356.639
Citation
V. Raineri, S. Lombardo, P. Musumeci, A.M. Maktari, L. Calcagno, "Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC", Materials Science Forum, Vols. 353-356, pp. 639-642, 2001
Online since
January 2001
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Price
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