Paper Title:
Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
643-646
DOI
10.4028/www.scientific.net/MSF.353-356.643
Citation
S. Suzuki, W.J. Cho, R. Kosugi, J. Senzaki, S. Harada, K. Fukuda, "Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties", Materials Science Forum, Vols. 353-356, pp. 643-646, 2001
Online since
January 2001
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Price
$32.00
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