Paper Title:
Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
651-654
DOI
10.4028/www.scientific.net/MSF.353-356.651
Citation
S. Scharnholz, O. Hellmund, J. Stein, B. Spangenberg, H. Kurz, "Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC", Materials Science Forum, Vols. 353-356, pp. 651-654, 2001
Online since
January 2001
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Price
$32.00
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