Paper Title:
Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
691-694
DOI
10.4028/www.scientific.net/MSF.353-356.691
Citation
Q. Wahab, E.B. Macák, J. Zhang, L. D. Madsen, E. Janzén, "Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing", Materials Science Forum, Vols. 353-356, pp. 691-694, 2001
Online since
January 2001
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