Paper Title:
Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
| Periodical |
Materials Science Forum (Volumes 353 - 356)
|
| Main Theme |
Silicon Carbide and Related Materials 2000
|
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
691-694 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.691 |
| Citation |
Qamar-ul Wahab et al., 2001, Materials Science Forum, 353-356, 691 |
| Authors |
Qamar-ul Wahab, E.B. Macák, Jie Zhang, Lynnette D. Madsen, Erik Janzén |
| Keywords |
Dangling Bond, Hydrogen Annealing, Interface States (or Traps), Power Device, Schottky Diode |
| Price |
US$ 28,- |