Paper Title:

Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

Periodical Materials Science Forum (Volumes 353 - 356)
Main Theme Silicon Carbide and Related Materials 2000
Edited by G. Pensl, D. Stephani and M. Hundhausen
Pages 691-694
DOI 10.4028/www.scientific.net/MSF.353-356.691
Citation Qamar-ul Wahab et al., 2001, Materials Science Forum, 353-356, 691
Authors Qamar-ul Wahab, E.B. Macák, Jie Zhang, Lynnette D. Madsen, Erik Janzén
Keywords Dangling Bond, Hydrogen Annealing, Interface States (or Traps), Power Device, Schottky Diode
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