Paper Title:
A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers
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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
699-702
DOI
10.4028/www.scientific.net/MSF.353-356.699
Citation
J. Eriksson, N. Rorsman, H. Zirath, R. Jonsson, Q. Wahab, S. Rudner, "A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers", Materials Science Forum, Vols. 353-356, pp. 699-702, 2001
Online since
January 2001
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Price
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