SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
7-10 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.7 |
| Citation |
Cécile Moulin et al., 2001, Materials Science Forum, 353-356, 7 |
| Authors |
Cécile Moulin, Michel Pons, Alexander Pisch, Philippe Grosse, Christian Faure, Alain Basset, Gérard Basset, Antoine Passero, Thierry Billon, Bernard Pelissier, Mikhail Anikin, Etienne Pernot, Petra Pernot-Rejmánková, Roland Madar |
| Keywords |
Defect, Heat Transfer Simulation, SiC Sublimation Growth |
| Full Paper |
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