Paper Title:
Double Implanted Power MESFET Technology in 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
707-710
DOI
10.4028/www.scientific.net/MSF.353-356.707
Citation
A. B. Horsfall, S. Ortolland, N. G. Wright, C. M. Johnson, A.P. Knights, "Double Implanted Power MESFET Technology in 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 707-710, 2001
Online since
January 2001
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Price
$32.00
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