Paper Title:
Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
731-734
DOI
10.4028/www.scientific.net/MSF.353-356.731
Citation
H. Sugimoto, S. I. Kinouchi, Y. Tarui, M. Imaizumi, K. Ohtsuka, T. Takami, T. Ozeki, "Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC", Materials Science Forum, Vols. 353-356, pp. 731-734, 2001
Online since
January 2001
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