Paper Title:
Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
739-742
DOI
10.4028/www.scientific.net/MSF.353-356.739
Citation
J. B. Fedison, T. P. Chow, "Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors", Materials Science Forum, Vols. 353-356, pp. 739-742, 2001
Online since
January 2001
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Price
$32.00
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