Paper Title:
Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
757-762
DOI
10.4028/www.scientific.net/MSF.353-356.757
Citation
F. Nava, P. Vanni, G. Verzellesi, A. Castaldini, A. Cavallini, L. Polenta, R. Nipoti, C. Donolato, "Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 353-356, pp. 757-762, 2001
Online since
January 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.