Paper Title:
From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
795-798
DOI
10.4028/www.scientific.net/MSF.353-356.795
Citation
M. Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, N. Schnell, B. Beaumont, P. Gibart, J. Massies, "From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization", Materials Science Forum, Vols. 353-356, pp. 795-798, 2001
Online since
January 2001
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