From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
795-798 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.795 |
| Citation |
Mathieu Leroux et al., 2001, Materials Science Forum, 353-356, 795 |
| Authors |
Mathieu Leroux, H. Lahrèche, F. Semond, M. Laügt, E. Feltin, N. Schnell, B. Beaumont, Pierre Gibart, J. Massies |
| Keywords |
Biaxial Strain, Luminescence, Nitride Heteroepitaxy, Reflectivity |
| Full Paper |
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