High-Performance Surface-Channel Diamond Field-Effect Transistors |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
815-0 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.815 |
| Citation |
Hitoshi Umezawa et al., 2001, Materials Science Forum, 353-356, 815 |
| Authors |
Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hideyo Okushi, Hiroshi Kawarada |
| Keywords |
Cut-Off Frequency, Field-Effect Transistor, Hydrogen-Terminated Surface Conductive Layer |
| Full Paper |
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