Paper Title:
Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
91-94
DOI
10.4028/www.scientific.net/MSF.353-356.91
Citation
J. Zhang, A. Ellison, Ö. Danielsson, A. Henry, E. Janzén, "Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations", Materials Science Forum, Vols. 353-356, pp. 91-94, 2001
Online since
January 2001
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