Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation |
| Journal |
Materials Science Forum (Volumes 353 - 356) |
| Volume |
Silicon Carbide and Related Materials 2000 |
| Edited by |
G. Pensl, D. Stephani and M. Hundhausen |
| Pages |
99-102 |
| DOI |
10.4028/www.scientific.net/MSF.353-356.99 |
| Citation |
Örjan Danielsson et al., 2001, Materials Science Forum, 353-356, 99 |
| Authors |
Örjan Danielsson, Urban Forsberg, Anne Henry, Erik Janzén |
| Keywords |
Chemical Vapor Deposition (CVD), Epitaxial Growth, Simulation, Temperature Distribution |
| Full Paper |
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