Paper Title:
Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
  Abstract

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Periodical
Materials Science Forum (Volumes 353-356)
Edited by
G. Pensl, D. Stephani and M. Hundhausen
Pages
99-102
DOI
10.4028/www.scientific.net/MSF.353-356.99
Citation
Ö. Danielsson, U. Forsberg, A. Henry, E. Janzén, "Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation", Materials Science Forum, Vols. 353-356, pp. 99-102, 2001
Online since
January 2001
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