Silicon Carbide and Related Materials 2000
Materials Science Forum Volumes 353 - 356
doi:10.4028/www.scientific.net/MSF.353-356
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p807
III-Nitride Power Devices - Good Results and Great Expectations
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356 K
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Authors: Michael S. Shur, Remis Gaska, Asif Khan -
p815
High-Performance Surface-Channel Diamond Field-Effect Transistors
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183 K
]
Authors: Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hideyo Okushi, Hiroshi Kawarada
