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Silicon Carbide and Related Materials 2000

Materials Science Forum Volumes 353 - 356

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• p115 SiC Defect Density Reduction by Epitaxy on Porous Surfaces   [ 323 K ]
  Authors: Stephen E. Saddow, Marina G. Mynbaeva, Wolfgang J. Choyke, Robert P. Devaty, Song Bai, Galyna Melnychuck, Yaroslav Koshka, Vladimir Dmitriev, C.E.C. Wood
• p119 Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations   [ 254 K ]
  Authors: N.S. Savkina, V.V. Ratnikov, V.B. Shuman, Alexander A. Lebedev
• p123 Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD   [ 407 K ]
  Authors: Shigehiro Nishino, Yasuichi Masuda, Satoru Ohshima, Chacko Jacob
• p127 Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates   [ 318 K ]
  Authors: Chacko Jacob, P. Pirouz, Shigehiro Nishino
• p131 Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate   [ 282 K ]
  Authors: Hidekazu Tsuchida, Takashi Tsuji, Isaho Kamata, Tamotsu Jikimoto, Hiroyuki Fujisawa, Shinji Ogino, Kunikaza Izumi
• p135 Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates   [ 544 K ]
  Authors: Koh Masahara, Mitsuhiro Kushibe, H. Ohno, Kazutoshi Kojima, Tetsuo Takahashi, Takaya Suzuki, Yuuki Ishida, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
• p139 Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si₂Cl₆+C₃H₈ System   [ 336 K ]
  Authors: Yasuichi Masuda, Satoru Ohshima, Chacko Jacob, Shigehiro Nishino
• p143 Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates   [ 389 K ]
  Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Erik Janzén
• p147 SiC Polytype Transformation on the Growth Surface   [ 259 K ]
  Authors: E.N. Mokhov, S.K. Obyden, A.D. Roenkov, G.V. Saparin, Yu.A. Vodakov
• p151 Improvement of the 3C-SiC/Si Interface by Flash Lamp Annealing   [ 325 K ]
  Authors: D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vouroutzis, G. Krötz, Wolfgang Skorupa
• p155 How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates   [ 185 K ]
  Authors: Thierry Chassagne, Gabriel Ferro, C. Gourbeyre, M. Le Berre, Daniel Barbier, Yves Monteil
• p159 Growth of 3C-SiC on Si by Low Temperature CVD   [ 219 K ]
  Authors: T. Cloitre, N. Moreaud, Patrice Vicente, M.L. Sadowski, R.L. Aulombard
• p163 Growth of SiC on Si(100) by Low-Pressure MOVPE   [ 211 K ]
  Authors: Andrey Bakin, A.A. Ivanov, Kensaku Hisada, T. Riedl, F. Hitzel, H.-H. Wehmann, A. Schlachetzki
• p167 The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process   [ 306 K ]
  Authors: Chien-Hung Wu, Juyong Chung, Moon Hi Hong, Christian A. Zorman, P. Pirouz, Mehran Mehregany
• p171 A Comparison of SiO₂ and Si₃N₄ Masks for Selective Epitaxial Growth of 3C-SiC Films on Si   [ 332 K ]
  Authors: Chien-Hung Wu, Juyong Chung, Moon Hi Hong, Christian A. Zorman, P. Pirouz, Mehran Mehregany