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Silicon Carbide and Related Materials 2000

Materials Science Forum Volumes 353 - 356

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• p549 Doping of Silicon Carbide by Ion Implantation   [ 409 K ]
  Authors: Bengt G. Svensson, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Martin S. Janson, Boleslaw Formanek, John Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, J. Peber Bergman, C. Jagadish, Erwan Morvan
• p555 Neutron Irradiation of 4H SiC   [ 205 K ]
  Authors: F.H.C. Carlsson, L. Storasta, Björn Magnusson, J. Peber Bergman, K. Sköld, Erik Janzén
• p559 Techniques for Depth Profiling of Dopants in 4H-SiC   [ 258 K ]
  Authors: John Österman, Anders Hallén, Srinivasan Anand, Margareta K. Linnarsson, H. Andersson, Boleslaw Formanek, D. Panknin, Wolfgang Skorupa
• p563 Growth of δ-Doped SiC Epitaxial Layers   [ 220 K ]
  Authors: S. Karlsson, C. Adås, Andrey O. Konstantinov, Margareta K. Linnarsson
• p567 Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor   [ 248 K ]
  Authors: S. Ortolland, Nicolas G. Wright, C. Mark Johnson, A.P. Knights, Paul G. Coleman, C.P. Burrows, A.J. Pidduck
• p571 High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing   [ 333 K ]
  Authors: Mihai Lazar, Laurent Ottaviani, Marie Laure Locatelli, Christophe Raynaud, Dominique Planson, Erwan Morvan, Phillippe Godignon, Wolfgang Skorupa, Jean-Pierre Chante
• p575 Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions   [ 236 K ]
  Authors: Takeshi Ohshima, Hisayoshi Itoh, Masahito Yoshikawa
• p579 High Dose Implantation in 6H-SiC   [ 322 K ]
  Authors: V. Heera, Wolfgang Skorupa, J. Stoemenos, Béla Pécz
• p583 Precipitate Formation in Heavily Al-Doped 4H-SiC Layers   [ 308 K ]
  Authors: Margareta K. Linnarsson, P.O.Å. Persson, H. Bleichner, Martin S. Janson, Uwe Zimmermann, H. Andersson, S. Karlsson, Rositza Yakimova, L. Hultman, Bengt G. Svensson
• p587 Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC   [ 200 K ]
  Authors: D. Panknin, T. Gebel, Wolfgang Skorupa
• p591 Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers   [ 234 K ]
  Authors: C. Serre, D. Panknin, A. Pérez-Rodríguez, A. Romano-Rodríguez, J.R. Morante, Reinhard Kögler, Wolfgang Skorupa, Jaume Esteve, M.C. Acero
• p595 Channeling Measurements of Ion Implantation Damage in 4H-SiC   [ 186 K ]
  Authors: Andrej Yu. Kuznetsov, Martin S. Janson, Anders Hallén, Bengt G. Svensson, C. Jagadish, H. Grünleitner, Gerhard Pensl
• p599 The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects   [ 263 K ]
  Authors: Giorgio Lulli, E. Albertazzi, Roberta Nipoti, Marco Bianconi, A. Carnera
• p603 Formation of Large Area Al Contacts on 6H- and 4H-SiC Substrates   [ 202 K ]
  Authors: Oleg Korolkov, Toomas Rang
• p607 Ru Schottky Barrier Contacts to n- and p-type 6H-SiC   [ 204 K ]
  Authors: M.E. Samiji, E. van Wyk, L. Wu, A.M. Venter, A.W.R. Leitch