Positron Annihilation - ICPA-12
Materials Science Forum Volumes 363 - 365
doi:10.4028/www.scientific.net/MSF.363-365
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p1
Atomic Processes Involved in Precipitate Nucleation in Aged Aluminium Alloys
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504 K
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Authors: Ian J. Polmear
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p9
Status of Positron Annihilation Studies of Age-Hardening in Aluminum Alloys
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466 K
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Authors: Alberto Somoza
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p15
Current and Potential Uses of Positron Beams to Study Porosity in Low-k Dielectric Thin Films
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306 K
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Authors: K.P. Rodbell, M.P. Petkov, Marc H. Weber, Kelvin G. Lynn, W. Volksen, Robert D. Miller
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p20
Current Trends in Ion Implantation
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279 K
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Authors: Russell Gwilliam
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p25
Defect Identification with Positrons
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340 K
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Authors: C.D. Beling, S. Fung
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p30
Bulk Studies of Defects in Semiconductors
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195 K
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Authors: Peter Mascher
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p35
Thermal Vacancy Formation and Diffusion in Nanocrystalline Materials
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299 K
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Authors: R. Würschum
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p40
Positron Annihilation in Diamond
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479 K
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Authors: A.A. Shiryaev, K. Iakoubovskii, H. Schut, A. van Veen, R. Escobar-Galindo, O.D. Zakharchenko, Yu. A. Klyuev, F. Kaminsky, B.N. Feigelson
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p47
Investigation of Reactor Steels
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354 K
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Authors: V. Slugen, J. Hascik, R. Gröne, P. Bartik, Andrej Zeman, Gottfried Kögel, Peter Sperr, Werner Triftshäuser
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p52
Defect Studies in Semiconductors
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223 K
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Authors: Masanori Fujinami, Tsuguo Sawada, Takashi Akahane
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p56
Defect Physics Investigations Using Positron and Ion Beams
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294 K
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Authors: P.J. Simpson, Stanislaw Szpala, A.P. Knights
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p61
Open-Volume Defects in Plastically Deformed Semiconductors
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146 K
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Authors: H.S. Leipner, C.G. Hübner, T.E.M. Staab, Reinhard Krause-Rehberg
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p64
Native and Irradiation-Induced Defects in SiO2 Structures Studied by Positron Annihilation Techniques
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184 K
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Authors: A. Rivera, I. Montilla, A. Alba García, R. Escobar-Galindo, C.V. Falub, A. van Veen, H. Schut, J.M.M. de Nijs, P. Balk
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p67
Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations
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175 K
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Authors: Z. Tang, T. Nonaka, Yasuyoshi Nagai, Mitsuru Hasegawa
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p70
Identification of Vacancies on each Sublattice of SiC by Coincident Doppler Broadening of the Positron Annihilation Photons after Electron Irradiation
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156 K
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Authors: M.A. Müller, Al. Rempel, K.J. Reichle, W. Sprengel, J. Major, Hans Eckhardt Schaefer