Paper Title:
Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 363-365)
Edited by
Werner Triftshäuser, Gottfried Kögel and Peter Sperr
Pages
442-444
DOI
10.4028/www.scientific.net/MSF.363-365.442
Citation
W. Anwand, G. Brauer, D. Panknin, W. Skorupa, "Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour", Materials Science Forum, Vols. 363-365, pp. 442-444, 2001
Online since
April 2001
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