Paper Title:
Role of the RF Power on the Structure of Defects in a-Si:H Films Produced by PECVD
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 363-365)
Edited by
Werner Triftshäuser, Gottfried Kögel and Peter Sperr
Pages
454-456
DOI
10.4028/www.scientific.net/MSF.363-365.454
Citation
P. M. Gordo, V.S. Subrahmanyam, M. Duarte Naia, C. Lopes Gil, A. P. de Lima, G. Lavareda, C. N. de Carvalho, A. Amaral, "Role of the RF Power on the Structure of Defects in a-Si:H Films Produced by PECVD", Materials Science Forum, Vols. 363-365, pp. 454-456, 2001
Online since
April 2001
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