Paper Title:
Defect Study on Si Implanted with B and BF2 Ions by Coincidence Doppler Broadening Measurements
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 363-365)
Edited by
Werner Triftshäuser, Gottfried Kögel and Peter Sperr
Pages
469-471
DOI
10.4028/www.scientific.net/MSF.363-365.469
Citation
T. Akahane, M. Fujinami, K. Ohnishi, T. Sawada, "Defect Study on Si Implanted with B and BF2 Ions by Coincidence Doppler Broadening Measurements", Materials Science Forum, Vols. 363-365, pp. 469-471, 2001
Online since
April 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.