Paper Title:
Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 363-365)
Edited by
Werner Triftshäuser, Gottfried Kögel and Peter Sperr
Pages
475-477
DOI
10.4028/www.scientific.net/MSF.363-365.475
Citation
X.Y. Zhou, T.H. Zhang, X.F. Zhang, H. M. Weng, Y.M. Fan, J.F. Du, R. D. Han, "Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam", Materials Science Forum, Vols. 363-365, pp. 475-477, 2001
Online since
April 2001
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