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Identification of Vacancies on each Sublattice of SiC by Coincident Doppler Broadening of the Positron Annihilation Photons after Electron Irradiation

Journal Materials Science Forum (Volumes 363 - 365)
Volume Positron Annihilation - ICPA-12
Edited by Werner Triftshäuser, Gottfried Kögel and Peter Sperr
Pages 70-72
DOI 10.4028/www.scientific.net/MSF.363-365.70
Citation M.A. Müller et al., 2001, Materials Science Forum, 363-365, 70
Authors M.A. Müller, Al. Rempel, K.J. Reichle, W. Sprengel, J. Major, Hans Eckhardt Schaefer
Keywords Coincident Doppler Broadening, Lattice Vacancy, Positron Annihilation, Silicon Carbide (SiC)
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