Defects in Semiconductors 15
Materials Science Forum Volumes 38 - 41
doi:10.4028/www.scientific.net/MSF.38-41
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p1
Impact of Defects on the Technology of Highly Integrated Circuits
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713 K
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Authors: Bernd O. Kolbesen, Werner Bergholz, H. Wendt
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p13
Defects and Future Semiconductor Devices
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545 K
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Authors: D.V. Lang
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p25
Configurations and Properties of Hydrogen in Crystalline Semiconductors
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657 K
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Authors: S.J. Pearton, Michael Stavola, James W. Corbett
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p39
Defect Metastability and Bistability
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617 K
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Authors: G.D. Watkins
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p51
The EL2 Defect in GaAs
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308 K
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Authors: Jaroslaw Dąbrowski, Matthias Scheffler
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p59
Magneto-Optical and ODMR Investigations on Intrinsic and Extrinsic Defects in GaAs
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346 K
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Authors: B.K. Meyer
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p67
Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2
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205 K
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Authors: Toshiyuki Ikoma, Yukito Hagihara
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p73
ESR-Spectra of Defects in Plastically Deformed GaAs
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250 K
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Authors: M. Wattenbach, Joachim Krüger, Christian Kisielowski-Kemmerich, H. Alexander
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p79
The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs
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217 K
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Authors: P. Omling, P. Silverberg, L. Samuelson
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p85
Metastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye Tail
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143 K
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Authors: X. Boddaert, D. Stiévenard, Michel Lannoo, Pierre Boher
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p91
EL2 and the Electronic Structure of the AsGa-ASj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction
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212 K
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Authors: G.A. Baraff, M. Schluter, Michel Lannoo
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p97
The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs
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180 K
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Authors: Hans Jürgen von Bardeleben, J.C. Bourgoin, D. Stiévenard
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p101
EL2 - Intracenter Absorption under Hydrostatic Pressure
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191 K
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Authors: M. Baj, P. Dreszer
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p107
Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2
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217 K
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Authors: J. Bittebierre, R.T. Cox, R. Picard, E. Molva
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p113
Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs
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238 K
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Authors: L. Dobaczewski