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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

• Papers
• Abstracts

• p1 Impact of Defects on the Technology of Highly Integrated Circuits   [ 713 K ]
  Authors: Bernd O. Kolbesen, Werner Bergholz, H. Wendt
• p13 Defects and Future Semiconductor Devices   [ 545 K ]
  Authors: D.V. Lang
• p25 Configurations and Properties of Hydrogen in Crystalline Semiconductors   [ 657 K ]
  Authors: S.J. Pearton, Michael Stavola, James W. Corbett
• p39 Defect Metastability and Bistability   [ 617 K ]
  Authors: G.D. Watkins
• p51 The EL2 Defect in GaAs   [ 308 K ]
  Authors: Jaroslaw Dąbrowski, Matthias Scheffler
• p59 Magneto-Optical and ODMR Investigations on Intrinsic and Extrinsic Defects in GaAs   [ 346 K ]
  Authors: B.K. Meyer
• p67 Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2   [ 205 K ]
  Authors: Toshiyuki Ikoma, Yukito Hagihara
• p73 ESR-Spectra of Defects in Plastically Deformed GaAs   [ 250 K ]
  Authors: M. Wattenbach, Joachim Krüger, Christian Kisielowski-Kemmerich, H. Alexander
• p79 The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs   [ 217 K ]
  Authors: P. Omling, P. Silverberg, L. Samuelson
• p85 Metastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye Tail   [ 143 K ]
  Authors: X. Boddaert, D. Stiévenard, Michel Lannoo, Pierre Boher
• p91 EL2 and the Electronic Structure of the As_Ga-A_Sj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction   [ 212 K ]
  Authors: G.A. Baraff, M. Schluter, Michel Lannoo
• p97 The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs   [ 180 K ]
  Authors: Hans Jürgen von Bardeleben, J.C. Bourgoin, D. Stiévenard
• p101 EL2 - Intracenter Absorption under Hydrostatic Pressure   [ 191 K ]
  Authors: M. Baj, P. Dreszer
• p107 Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2   [ 217 K ]
  Authors: J. Bittebierre, R.T. Cox, R. Picard, E. Molva
• p113 Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs   [ 238 K ]
  Authors: L. Dobaczewski