Paper Title:
Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1021-1026
DOI
10.4028/www.scientific.net/MSF.38-41.1021
Citation
Y.-C. Du, M.-X. Yan, G.-G. Qin, "Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects", Materials Science Forum, Vols. 38-41, pp. 1021-1026, 1989
Online since
January 1991
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