Paper Title:
Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1121-1124
DOI
10.4028/www.scientific.net/MSF.38-41.1121
Citation
R. Piotrzkowski, "Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure", Materials Science Forum, Vols. 38-41, pp. 1121-1124, 1989
Online since
January 1991
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Price
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