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Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs

Journal Materials Science Forum (Volumes 38 - 41)
Volume Defects in Semiconductors 15
Edited by G. Ferenczi
Pages 113-118
DOI 10.4028/www.scientific.net/MSF.38-41.113
Citation L. Dobaczewski, 1991, Materials Science Forum, 38-41, 113
Authors L. Dobaczewski
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