Paper Title:
Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1187-1192
DOI
10.4028/www.scientific.net/MSF.38-41.1187
Citation
R. Lenhard, S. Luby, "Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing", Materials Science Forum, Vols. 38-41, pp. 1187-1192, 1989
Online since
January 1991
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