Paper Title:
Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1221-1226
DOI
10.4028/www.scientific.net/MSF.38-41.1221
Citation
S. Winter, S. Blässer, H. Hofsäss, S.G. Jahn, G. Lindner, E. Recknagel, "Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes", Materials Science Forum, Vols. 38-41, pp. 1221-1226, 1989
Online since
January 1991
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